A colossal breakthrough for topological spintronics: BiSb expands the potential of topological insulators for ultra-low-power electronic devices
Tokyo Institute of Technology
The achievement represents a big step forward in the development of spin-orbit torque magnetoresistive random-access memory (SOT-MRAM)[3] devices with the potential to replace existing memory technologies. The BiSb thin films achieve a colossal spin Hall angle of approximately 52, conductivity of 2.5 x 105 and spin Hall conductivity of 1.3×107 at room temperature. [2] Topological insulators: Materials with highly electrically conductive surfaces, but which act as insulators on the inside. [4] Spin Hall effect: A Hall effect for spins originating from the coupling of charge and spin. Pure spin currents can be generated via the spin Hall effect.
Tags:
- Bismuth antimonide
- Topological insulator
- Magnetoresistive RAM
- Spintronics
- Insulator (electricity)
- Hall effect
- Spin (physics)
- Electrical resistivity and conductivity
- Thin film
- Spin Hall effect
- Spinorbit interaction
- Band gap
- Manufacturing
- Physical quantities
- Electronics
- Building engineering
- Physical sciences
- Phases of matter
- Chemistry
- Condensed matter
- Physics
- Chemical product engineering
- Technology
- Applied and interdisciplinary physics
- Condensed matter physics
- Electricity
- Materials science
- Materials
- Electromagnetism
- Electrical engineering