Researchers develop sub-7-nm memory device without nanofabrication
Previous research has already demonstrated several different varieties of single-digit-nanometer structures. The most significant part of this research is that we showed sub-5-nm memory cell with good thermal stability, Hong told Phys.org. We used a self-assembly method to make 5-nm nanomaget grains for information storage without the necessity of nanofabrication. The two magnetization directions correspond to two states (parallel and anti-parallel) of a magnetic tunnel junction, which forms the basic building block of a nonvolatile memory cell. Using a state-of-the-art highly focused spin probe, the researchers demonstrated that an applied current switches the magnetization of individual nanomagnets due to spin transfer torque.